Chinese research team claims world’s fastest non-volatile memory with 400ps write speed, but gives it a PoXy name

Chinese researchers have developed super-fast non volatile flash memory Graphene channel enables 400 picosecond write speed and persistent storage “PoX” device targets AI bottlenecks with low power, high speed performance A research team in China has developed what claims is the fastest reported non-volatile semiconductor memory device to date, with a write speed of one bit every 400 picoseconds. The unfortunately named “PoX” (Phase-change Oxide), is a two-dimensional graphene-channel flash device developed at Fudan University in Shanghai. The team built the device using a Dirac graphene channel combined with a charge-trapping stack. It operates faster than the system-level access times…